Spacing effect on dislocation injection from sharp features in strained silicon structures
In practice, the SiN stripes or pads are periodically patterned on silicon, so the spacing effect on dislocation injection from sharp features deserves attention. As in Figure 1, the SiN stripes with residue stress, of width L and thickness h, are periodically patterned with spacing S. In the numerical calculation, we take shear modulus and Poisson’s ratio of Si3N4 to be 54.3 GPa and 0.27, and those of silicon 68.1GPa and 0.22, the same as in Ref.[1].